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1. product pro?le 1.1 general description npn silicon planar epitaxial transistor in a 4-pin dual-emitter sot343r plastic package. 1.2 features n high power gain n low noise ?gure n high transition frequency n gold metallization ensures excellent reliability 1.3 applications n intended for radio frequency (rf) front end applications in the ghz range, such as: u analog and digital cellular telephones u cordless telephones (cordless telephone (ct), personal communication network (pcn), digital enhanced cordless telecommunications (dect), etc.) u radar detectors u pagers u satellite antenna television (satv) tuners 1.4 quick reference data bfg325w/xr npn 14 ghz wideband transistor rev. 01 2 february 2005 product data sheet table 1: quick reference data symbol parameter conditions min typ max unit v cbo collector-base voltage open emitter - - 15 v v ceo collector-emitter voltage open base - - 6 v i c collector current (dc) - - 35 ma p tot total power dissipation t sp 90 c [1] - - 210 mw h fe dc current gain i c = 15 ma; v ce =3v; t j =25 c 60 100 200 c cbs collector-base capacitance v cb = 5 v; f = 1 mhz; emitter grounded - 0.27 0.4 pf f t transition frequency i c = 15 ma; v ce =3v; f = 1 ghz; t amb =25 c - 14 - ghz g max maximum power gain [2] i c = 15 ma; v ce =3v; f = 1.8 ghz; t amb =25 c - 18.3 - db
9397 750 14246 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 february 2005 2 of 12 philips semiconductors bfg325w/xr npn 14 ghz wideband transistor [1] t sp is the temperature at the soldering point of the collector pin. [2] g max is the maximum power gain, if k > 1. if k < 1 then g max = msg, see figure 4 . 2. pinning information 3. ordering information 4. marking [1] * = p: made in hong kong. 5. limiting values | s 21 | 2 insertion power gain i c = 15 ma; v ce =3v; f = 1.8 ghz; t amb =25 c; z s =z l =50 w -14-db nf noise ?gure g s = g opt ; i c = 3 ma; v ce =3v; f=2ghz - 1.1 - db table 1: quick reference data continued symbol parameter conditions min typ max unit table 2: pinning pin description simpli?ed outline symbol 1 collector 2 emitter 3 base 4 emitter 21 4 3 sym086 1 2, 4 3 table 3: ordering information type number package name description version bfg325w/xr - plastic surface mounted package; reverse pinning; 4 leads sot343r table 4: marking codes type number marking code [1] bfg325w/xr a8* table 5: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - 15 v v ceo collector-emitter voltage open base - 6 v v ebo emitter-base voltage open collector - 2 v
9397 750 14246 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 february 2005 3 of 12 philips semiconductors bfg325w/xr npn 14 ghz wideband transistor [1] t sp is the temperature at the soldering point of the collector pin. 6. thermal characteristics [1] t sp is the temperature at the soldering point of the collector pin. 7. characteristics [1] g max is the maximum power gain, if k > 1. if k < 1 then g max = msg, see figure 4 . k is the rollet stability factor: where . msg = maximum stable gain. i c collector current (dc) - 35 ma p tot total power dissipation t sp 90 c [1] - 210 mw t stg storage temperature - 65 +175 c t j junction temperature - 175 c table 5: limiting values continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit table 6: thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point t sp 90 c [1] 403 k/w table 7: characteristics t j =25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit i cbo collector-base cut-off current i e = 0 a; v cb =5v --15na h fe dc current gain i c = 15 ma; v ce = 3 v 60 100 200 c cbs collector-base capacitance v cb = 5 v; f = 1 mhz; emitter grounded - 0.27 0.4 pf c ces collector-emitter capacitance v ce = 5 v; f = 1 mhz; base grounded - 0.22 - pf c ebs emitter-base capacitance v eb = 0.5 v; f = 1 mhz; collector grounded - 0.49 - pf f t transition frequency i c = 15 ma; v ce = 3 v; f = 1 ghz; t amb =25 c - 14 - ghz g max maximum power gain [1] i c = 15 ma; v ce = 3 v; f = 1.8 ghz; t amb =25 c - 18.3 - db | s 21 | 2 insertion power gain i c = 15 ma; v ce =3v; t amb =25 c; z s =z l =50 w f = 1.8 ghz - 14 - db f = 3 ghz - 10 - db nf noise ?gure g s = g opt ; i c = 3 ma; v ce = 3 v; f = 2 ghz - 1.1 - db p l(1db) output power at 1 db gain compression i c = 15 ma; v ce = 3 v; f = 1.8 ghz; t amb =25 c; z s =z l =50 w - 8.7 - dbm ip3 third order intercept point i c = 15 ma; v ce = 3 v; f = 1.8 ghz; t amb =25 c; z s =z l =50 w - 19.4 - dbm k 1ds 2 s 11 2 C s 22 2 C + 2s 21 s 12 ---------------------------------------------------------- - = ds s 11 s 22 s 12 s 21 C =
9397 750 14246 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 february 2005 4 of 12 philips semiconductors bfg325w/xr npn 14 ghz wideband transistor fig 1. power derating curve fig 2. collector current as a function of collector-emitter voltage; typical values i c = 0 ma; f = 1 mhz. i c = 15 ma; v ce =3v. fig 3. collector-base capacitance as a function of collector-base voltage; typical values fig 4. gain as a function of frequency; typical values t sp ( c) 0 200 150 50 100 001aac158 100 150 50 200 250 p tot (mw) 0 001aac159 v ce (v) 06 5 3 14 2 i c (ma) 10 15 20 25 5 30 35 0 i b = 350 m a 300 m a 250 m a 150 m a 100 m a 200 m a 50 m a v cb (v) 05 4 23 1 001aac160 0.26 0.30 0.34 c cbs (pf) 0.22 001aac161 20 10 30 40 g (db) 0 f (mhz) 10 10 4 10 3 10 2 g max msg s 21 2
9397 750 14246 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 february 2005 5 of 12 philips semiconductors bfg325w/xr npn 14 ghz wideband transistor v ce =3v; i c = 15 ma; z o =50 w . fig 5. common emitter input re?ection coef?cient (s 11 ); typical values v ce =3v; i c =15ma. fig 6. common emitter forward transmission coef?cient (s 21 ); typical values 001aac162 90 - 90 5 0.5 0.2 + 0.2 0 + 2 + 5 - 5 - 2 - 0.2 + 0.5 - 0.5 + 1 - 1 2 1 10 0 0.2 0.6 0.4 0.8 1.0 1.0 - 45 - 135 45 135 180 0 3 ghz 40 mhz 001aac163 90 - 90 - 45 - 135 45 135 0 0 180 50 40 30 20 10 40 mhz 3 ghz
9397 750 14246 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 february 2005 6 of 12 philips semiconductors bfg325w/xr npn 14 ghz wideband transistor v ce =3v; i c =15ma. fig 7. common emitter reverse transmission coef?cient (s 12 ); typical values v ce =3v; i c = 15 ma; z o =50 w . fig 8. common emitter output re?ection coef?cient (s 22 ); typical values 001aac164 90 - 90 - 45 - 135 45 135 0 0 180 0.5 0.4 0.3 0.2 0.1 3 ghz 40 mhz 001aac165 90 - 90 5 0.5 0.2 + 0.2 0 + 2 + 5 - 5 - 2 - 0.2 + 0.5 - 0.5 + 1 - 1 2 1 10 0 0.2 0.6 0.4 0.8 1.0 1.0 - 45 - 135 45 135 180 0 40 mhz 3 ghz
9397 750 14246 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 february 2005 7 of 12 philips semiconductors bfg325w/xr npn 14 ghz wideband transistor 8. application information table 8: spice parameters of the bfg325 die sequence parameter value unit 1 is 26.6 aa 2 bf 200 - 3nf 1- 4 vaf 40 v 5 ikf 105 ma 6 ise 2.3 fa 7 ne 2.114 - 8br 10- 9nr 1- 10 var 2.5 v 11 ikr 10 a 12 isc 0 aa 13 nc 1.5 - 14 rb 3.6 w 15 re 1.5 w 16 rc 2.6 w 17 cje 185.6 ff 18 vje 890 mv 19 mje 0.294 - 20 cjc 77.06 ff 21 vjc 601 mv 22 mjc 0.159 - 23 xcjc 1 - 24 fc 0.7 - 25 tf 8.1 ps 26 xtf 10 - 27 vtf 1000 v 28 itf 150 ma 29 ptf 0 deg 30 tr 0 ns 31 kf 0 - 32 af 1 - 33 tnom 25 c 34 eg 1.014 ev 35 xtb 0 - 36 xti 8 - 37 q1.area 2.5 -
9397 750 14246 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 february 2005 8 of 12 philips semiconductors bfg325w/xr npn 14 ghz wideband transistor fig 9. package equivalent circuit of sot343r table 9: list of components; see figure 9 designation value unit c cb 2ff c be 80 ff c ce 80 ff c_base_pad 67 ff c_emitter_pad 142 ff l c_wire 0.767 nh l b_wire 0.842 nh l e_wire 0.212 nh l c_lead 0.28 nh l b_lead 0.281 nh l e_lead 0.1 nh bjt1 c_base_pad l b_wire c cb chip l b_lead c be l e_wire l e_lead l c_wire l c_lead c ce c_emitter_pad 001aac166
9397 750 14246 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 february 2005 9 of 12 philips semiconductors bfg325w/xr npn 14 ghz wideband transistor 9. package outline fig 10. package outline sot343r references outline version european projection issue date iec jedec eiaj sot343r d a a 1 l p q detail x c h e e v m a a b 0 1 2 mm scale x 21 4 3 plastic surface mounted package; reverse pinning; 4 leads sot343r w m b 97-05-21 b p unit a 1 max b p cd e b 1 h e l p qw v mm 0.1 1.1 0.8 0.4 0.3 0.25 0.10 0.7 0.5 2.2 1.8 1.35 1.15 e 2.2 2.0 1.3 e 1 0.2 y 0.1 0.2 1.15 dimensions (mm are the original dimensions) 0.45 0.15 0.23 0.13 e 1 a e y b 1
9397 750 14246 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 february 2005 10 of 12 philips semiconductors bfg325w/xr npn 14 ghz wideband transistor 10. revision history table 10: revision history document id release date data sheet status change notice doc. number supersedes bfg325w_xr_1 20050202 product data sheet - 9397 750 14246 -
philips semiconductors bfg325w/xr npn 14 ghz wideband transistor 9397 750 14246 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 2 february 2005 11 of 12 11. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 13. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 14. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2005 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 2 february 2005 document number: 9397 750 14246 published in the netherlands philips semiconductors bfg325w/xr npn 14 ghz wideband transistor 15. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 3 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 application information. . . . . . . . . . . . . . . . . . . 7 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 11 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 12 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 14 contact information . . . . . . . . . . . . . . . . . . . . 11

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